Start With
Include WithHome > Products > Discrete Semiconductor > Transistors - Bipolar (BJT) - Single, Pre-Biased > PDTC123EMB,315
PDTC123EMB,315
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
| Manufacturer Part Number | PDTC123EMB,315 |
|---|---|
| Manufacturer | NXP Semiconductors |
| Description | TRANS PREBIAS NPN 250MW 3DFN |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| PDTC123EMB,315 Price |  |
Technical Specifications of PDTC123EMB,315
| Category | Discrete Semiconductor Products |
|---|---|
| Family | Transistors - Bipolar (BJT) - Single, Pre-Biased |
| Manufacturer | NXP Semiconductors |
| Series | - |
| Packaging | Tape & Reel (TR) |
| Transistor Type | NPN - Pre-Biased |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Resistor - Base (R1) (Ohms) | 2.2k |
| Resistor - Emitter Base (R2) (Ohms) | 2.2k |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 20mA, 5V |
| Vce Saturation (Max) @ Ib, Ic | 150mV @ 500μA, 10mA |
| Current - Collector Cutoff (Max) | 1μA |
| Frequency - Transition | 230MHz |
| Power - Max | 250mW |
| Mounting Type | Surface Mount |
| Package / Case | 3-XFDFN |
| Supplier Device Package | 3-DFN1006B (0.6x1) |
D.jpg)
