Technical Specifications of 2N5195
| Category | Discrete Semiconductor Products |
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| Family | Transistors - Bipolar (BJT) - Single |
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| Manufacturer | STMicroelectronics |
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| Series | - |
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| Packaging | Tube |
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| Transistor Type | PNP |
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| Current - Collector (Ic) (Max) | 4A |
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| Voltage - Collector Emitter Breakdown (Max) | 80V |
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| Vce Saturation (Max) @ Ib, Ic | 1.2V @ 1A, 4A |
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| Current - Collector Cutoff (Max) | 1mA |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 1.5A, 2V |
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| Power - Max | 40W |
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| Frequency - Transition | 2MHz |
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| Mounting Type | Through Hole |
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| Package / Case | TO-225AA, TO-126-3 |
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| Supplier Device Package | SOT-32-3 |
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