Technical Specifications of 2N6668
| Category | Discrete Semiconductor Products |
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| Family | Transistors - Bipolar (BJT) - Single |
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| Manufacturer | STMicroelectronics |
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| Series | - |
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| Packaging | Tube |
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| Transistor Type | PNP - Darlington |
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| Current - Collector (Ic) (Max) | 10A |
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| Voltage - Collector Emitter Breakdown (Max) | 80V |
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| Vce Saturation (Max) @ Ib, Ic | 3V @ 100mA, 10A |
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| Current - Collector Cutoff (Max) | 1mA |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | 1000 @ 5A, 3V |
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| Power - Max | 65W |
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| Frequency - Transition | - |
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| Mounting Type | Through Hole |
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| Package / Case | TO-220-3 |
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| Supplier Device Package | TO-220AB |
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