Technical Specifications of 2SB1257
| Datasheet |  2SB1257 datasheet |
|---|
| Category | Discrete Semiconductor Products |
|---|
| Family | Transistors - Bipolar (BJT) - Single |
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| Manufacturer | Sanken |
|---|
| Series | - |
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| Packaging | Bulk |
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| Transistor Type | PNP - Darlington |
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| Current - Collector (Ic) (Max) | 4A |
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| Voltage - Collector Emitter Breakdown (Max) | 60V |
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| Vce Saturation (Max) @ Ib, Ic | 1.5V @ 6mA, 3A |
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| Current - Collector Cutoff (Max) | 10μA (ICBO) |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | 2000 @ 3A, 4V |
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| Power - Max | 25W |
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| Frequency - Transition | 150MHz |
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| Mounting Type | Through Hole |
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| Package / Case | TO-220-3 Full Pack |
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| Supplier Device Package | TO-220F |
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