Technical Specifications of BDV65BG
| Datasheet |  BDV65BG datasheet |
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| Category | Discrete Semiconductor Products |
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| Family | Transistors - Bipolar (BJT) - Single |
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| Manufacturer | ON Semiconductor |
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| Series | - |
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| Packaging | Tube |
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| Transistor Type | NPN - Darlington |
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| Current - Collector (Ic) (Max) | 10A |
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| Voltage - Collector Emitter Breakdown (Max) | 100V |
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| Vce Saturation (Max) @ Ib, Ic | 2V @ 20mA, 5A |
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| Current - Collector Cutoff (Max) | 1mA |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | 1000 @ 5A, 4V |
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| Power - Max | 125W |
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| Frequency - Transition | - |
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| Mounting Type | Through Hole |
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| Package / Case | TO-247-3 |
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| Supplier Device Package | TO-247 |
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