Technical Specifications of VS-GB200TH120N
| Datasheet |  VS-GB200TH120N datasheet |
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| Category | Discrete Semiconductor Products |
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| Family | Transistors - IGBTs - Modules |
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| Manufacturer | Vishay Semiconductor Diodes Division |
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| Series | - |
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| IGBT Type | - |
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| Configuration | Half Bridge |
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| Voltage - Collector Emitter Breakdown (Max) | 1200V |
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| Current - Collector (Ic) (Max) | 360A |
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| Power - Max | 1136W |
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| Vce(on) (Max) @ Vge, Ic | 2.35V @ 15V, 200A |
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| Current - Collector Cutoff (Max) | 5mA |
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| Input Capacitance (Cies) @ Vce | 14.9nF @ 25V |
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| Input | Standard |
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| NTC Thermistor | No |
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| Mounting Type | Chassis Mount |
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| Package / Case | Double INT-A-PAK (3 + 4) |
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| Supplier Device Package | Double INT-A-PAK |
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