Technical Specifications of 2SA1887(F)
| Category | Discrete Semiconductor Products |
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| Family | Transistors - Bipolar (BJT) - Single |
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| Manufacturer | Toshiba Semiconductor and Storage |
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| Series | - |
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| Packaging | Tube |
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| Transistor Type | PNP |
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| Current - Collector (Ic) (Max) | 10A |
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| Voltage - Collector Emitter Breakdown (Max) | 50V |
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| Vce Saturation (Max) @ Ib, Ic | 400mV @ 250mA, 5A |
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| Current - Collector Cutoff (Max) | 1μA (ICBO) |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 1A, 1V |
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| Power - Max | 2W |
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| Frequency - Transition | 45MHz |
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| Mounting Type | Through Hole |
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| Package / Case | TO-220-3 Full Pack |
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| Supplier Device Package | TO-220NIS |
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