Technical Specifications of GP1M009A090N
| Datasheet |  GP1M009A090N datasheet |
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| Category | Discrete Semiconductor Products |
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| Family | Transistors - FETs, MOSFETs - Single |
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| Manufacturer | Global Power Technologies Group |
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| Series | - |
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| Packaging | Tube |
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| FET Type | MOSFET N-Channel, Metal Oxide |
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| FET Feature | Standard |
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| Drain to Source Voltage (Vdss) | 900V |
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| Current - Continuous Drain (Id) @ 25°C | 9.5A (Tc) |
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| Rds On (Max) @ Id, Vgs | 1.4 Ohm @ 4.75A, 10V |
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| Vgs(th) (Max) @ Id | 4V @ 250μA |
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| Gate Charge (Qg) @ Vgs | 65nC @ 10V |
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| Input Capacitance (Ciss) @ Vds | 2324pF @ 25V |
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| Power - Max | 312W |
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| Operating Temperature | -55°C ~ 150°C (TJ) |
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| Mounting Type | Through Hole |
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| Package / Case | TO-3P-3, SC-65-3 |
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| Supplier Device Package | TO-3PN |
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