Technical Specifications of BSC750N10ND G
Datasheet | BSC750N10ND G datasheet |
Category | Discrete Semiconductor Products |
Family | Transistors - FETs, MOSFETs - Arrays |
Manufacturer | Infineon Technologies |
Series | OptiMOS? |
Packaging | Cut Tape (CT) |
FET Type | 2 N-Channel (Dual) |
FET Feature | Standard |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 3.2A |
Rds On (Max) @ Id, Vgs | 75 mOhm @ 13A, 10V |
Vgs(th) (Max) @ Id | 4V @ 12μA |
Gate Charge (Qg) @ Vgs | 11nC @ 10V |
Input Capacitance (Ciss) @ Vds | 720pF @ 50V |
Power - Max | 26W |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | 8-PowerVDFN |
Supplier Device Package | PG-TDSON-8 (5.15x6.15) |
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