Technical Specifications of 2N5657G
| Datasheet |  2N5657G datasheet |
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| Category | Discrete Semiconductor Products |
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| Family | Transistors - Bipolar (BJT) - Single |
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| Manufacturer | ON Semiconductor |
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| Series | - |
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| Packaging | Bulk |
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| Transistor Type | NPN |
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| Current - Collector (Ic) (Max) | 500mA |
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| Voltage - Collector Emitter Breakdown (Max) | 350V |
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| Vce Saturation (Max) @ Ib, Ic | 10V @ 100mA, 500mA |
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| Current - Collector Cutoff (Max) | 100μA |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 100mA, 10V |
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| Power - Max | 20W |
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| Frequency - Transition | 10MHz |
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| Mounting Type | Through Hole |
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| Package / Case | TO-225AA, TO-126-3 |
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| Supplier Device Package | TO-225AA |
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