Technical Specifications of BFP 640FESD E6327
| Category | Discrete Semiconductor Products |
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| Family | Transistors - Bipolar (BJT) - RF |
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| Manufacturer | Infineon Technologies |
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| Series | - |
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| Packaging | Tape & Reel (TR) |
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| Transistor Type | NPN |
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| Voltage - Collector Emitter Breakdown (Max) | 4.7V |
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| Frequency - Transition | 46GHz |
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| Noise Figure (dB Typ @ f) | 0.55dB ~ 1.7dB @ 150MHz ~ 10GHz |
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| Gain | 8B ~ 30.5dB |
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| Power - Max | 200mW |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | 110 @ 30mA, 3V |
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| Current - Collector (Ic) (Max) | 50mA |
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| Mounting Type | Surface Mount |
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| Package / Case | 4-SMD, Flat Leads |
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| Supplier Device Package | 4-TSFP |
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