Technical Specifications of APT25GP90BDQ1G
| Datasheet |  APT25GP90BDQ1G datasheet |
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| Category | Discrete Semiconductor Products |
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| Family | Transistors - IGBTs - Single |
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| Manufacturer | Microsemi Corporation |
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| Series | POWER MOS 7? |
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| Packaging | Tube |
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| IGBT Type | PT |
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| Voltage - Collector Emitter Breakdown (Max) | 900V |
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| Current - Collector (Ic) (Max) | 72A |
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| Current - Collector Pulsed (Icm) | 110A |
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| Vce(on) (Max) @ Vge, Ic | 3.9V @ 15V, 25A |
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| Power - Max | 417W |
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| Switching Energy | 370μJ (off) |
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| Input Type | Standard |
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| Gate Charge | 110nC |
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| Td (on/off) @ 25°C | 13ns/55ns |
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| Test Condition | 600V, 40A, 4.3 Ohm, 15V |
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| Reverse Recovery Time (trr) | - |
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| Package / Case | TO-247-3 |
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| Mounting Type | Through Hole |
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| Supplier Device Package | TO-247 [B] |
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