Technical Specifications of TK58E06N1,S1X
| Datasheet |  TK58E06N1,S1X datasheet |
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| Category | Discrete Semiconductor Products |
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| Family | Transistors - FETs, MOSFETs - Single |
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| Manufacturer | Toshiba Semiconductor and Storage |
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| Series | - |
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| Packaging | Tube |
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| FET Type | MOSFET N-Channel, Metal Oxide |
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| FET Feature | Standard |
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| Drain to Source Voltage (Vdss) | 60V |
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| Current - Continuous Drain (Id) @ 25°C | 58A (Ta) |
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| Rds On (Max) @ Id, Vgs | 5.4 mOhm @ 29A, 10V |
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| Vgs(th) (Max) @ Id | 4V @ 500μA |
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| Gate Charge (Qg) @ Vgs | 46nC @ 10V |
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| Input Capacitance (Ciss) @ Vds | 3400pF @ 30V |
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| Power - Max | 110W |
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| Operating Temperature | 150°C (TJ) |
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| Mounting Type | Through Hole |
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| Package / Case | TO-220-3 |
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| Supplier Device Package | TO-220 |
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