Technical Specifications of 2SB817C-1E
Datasheet | 2SB817C-1E datasheet |
Category | Discrete Semiconductor Products |
Family | Transistors - Bipolar (BJT) - Single |
Manufacturer | ON Semiconductor |
Series | - |
Packaging | Tube |
Transistor Type | PNP |
Current - Collector (Ic) (Max) | 12A |
Voltage - Collector Emitter Breakdown (Max) | 140V |
Vce Saturation (Max) @ Ib, Ic | 2V @ 500mA, 5A |
Current - Collector Cutoff (Max) | 100μA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 1A, 5V |
Power - Max | 120W |
Frequency - Transition | 10MHz |
Mounting Type | Through Hole |
Package / Case | TO-3P-3, SC-65-3 |
Supplier Device Package | TO-3P-3L |
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