Technical Specifications of IXBX75N170
| Datasheet |  IXBX75N170 datasheet |
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| Category | Discrete Semiconductor Products |
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| Family | Transistors - IGBTs - Single |
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| Manufacturer | IXYS |
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| Series | BIMOSFET? |
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| Packaging | Tube |
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| IGBT Type | - |
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| Voltage - Collector Emitter Breakdown (Max) | 1700V |
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| Current - Collector (Ic) (Max) | 200A |
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| Current - Collector Pulsed (Icm) | 580A |
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| Vce(on) (Max) @ Vge, Ic | 3.1V @ 15V, 75A |
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| Power - Max | 1040W |
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| Switching Energy | - |
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| Input Type | Standard |
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| Gate Charge | 350nC |
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| Td (on/off) @ 25°C | - |
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| Test Condition | - |
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| Reverse Recovery Time (trr) | 1.5μs |
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| Package / Case | TO-247-3 |
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| Mounting Type | Through Hole |
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| Supplier Device Package | PLUS247?-3 |
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