Technical Specifications of 2SA1943N(S1,E,S)
| Datasheet |  2SA1943N(S1,E,S) datasheet |
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| Category | Discrete Semiconductor Products |
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| Family | Transistors - Bipolar (BJT) - Single |
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| Manufacturer | Toshiba Semiconductor and Storage |
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| Series | - |
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| Packaging | Tube |
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| Transistor Type | PNP |
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| Current - Collector (Ic) (Max) | 15A |
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| Voltage - Collector Emitter Breakdown (Max) | 230V |
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| Vce Saturation (Max) @ Ib, Ic | 3V @ 800mA, 8A |
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| Current - Collector Cutoff (Max) | 5μA (ICBO) |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 1A, 5V |
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| Power - Max | 150W |
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| Frequency - Transition | 30MHz |
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| Mounting Type | Through Hole |
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| Package / Case | TO-3P-3, SC-65-3 |
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| Supplier Device Package | TO-3P(N) |
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