Technical Specifications of IRF5803D2PBF
| Datasheet |  IRF5803D2PBF datasheet |
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| Category | Discrete Semiconductor Products |
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| Family | Transistors - FETs, MOSFETs - Single |
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| Manufacturer | Infineon Technologies |
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| Series | FETKY? |
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| Packaging | Tube |
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| FET Type | MOSFET P-Channel, Metal Oxide |
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| FET Feature | Diode (Isolated) |
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| Drain to Source Voltage (Vdss) | 40V |
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| Current - Continuous Drain (Id) @ 25°C | 3.4A (Ta) |
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| Rds On (Max) @ Id, Vgs | 112 mOhm @ 3.4A, 10V |
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| Vgs(th) (Max) @ Id | 3V @ 250μA |
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| Gate Charge (Qg) @ Vgs | 37nC @ 10V |
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| Input Capacitance (Ciss) @ Vds | 1110pF @ 25V |
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| Power - Max | 2W |
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| Operating Temperature | -55°C ~ 150°C (TJ) |
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| Mounting Type | Surface Mount |
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| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
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| Supplier Device Package | 8-SO |
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