Technical Specifications of STGP10M65DF2
| Datasheet |  STGP10M65DF2 datasheet |
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| Category | Discrete Semiconductor Products |
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| Family | Transistors - IGBTs - Single |
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| Manufacturer | STMicroelectronics |
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| Series | - |
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| Packaging | Tube |
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| IGBT Type | Trench Field Stop |
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| Voltage - Collector Emitter Breakdown (Max) | 650V |
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| Current - Collector (Ic) (Max) | 20A |
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| Current - Collector Pulsed (Icm) | 40A |
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| Vce(on) (Max) @ Vge, Ic | 2V @ 15V, 10A |
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| Power - Max | 115W |
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| Switching Energy | 120μJ (on), 270μJ (off) |
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| Input Type | Standard |
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| Gate Charge | 28nC |
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| Td (on/off) @ 25°C | 19ns/91ns |
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| Test Condition | 400V, 10A, 22 Ohm, 15V |
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| Reverse Recovery Time (trr) | 96ns |
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| Package / Case | TO-220-3 |
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| Mounting Type | Through Hole |
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| Supplier Device Package | TO-220 |
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