Technical Specifications of UPA2765T1A-E2-AY
| Datasheet |  UPA2765T1A-E2-AY datasheet |
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| Category | Discrete Semiconductor Products |
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| Family | Transistors - FETs, MOSFETs - Single |
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| Manufacturer | Renesas Electronics America |
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| Series | - |
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| Packaging | Tape & Reel (TR) |
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| FET Type | MOSFET N-Channel, Metal Oxide |
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| FET Feature | Logic Level Gate, 4.5V Drive |
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| Drain to Source Voltage (Vdss) | 30V |
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| Current - Continuous Drain (Id) @ 25°C | 100A (Ta) |
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| Rds On (Max) @ Id, Vgs | 2.9 mOhm @ 32A, 4.5V |
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| Vgs(th) (Max) @ Id | - |
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| Gate Charge (Qg) @ Vgs | 152nC @ 10V |
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| Input Capacitance (Ciss) @ Vds | 6550pF @ 10V |
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| Power - Max | 1.5W |
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| Operating Temperature | 150°C (TJ) |
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| Mounting Type | Surface Mount |
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| Package / Case | 8-PowerVDFN |
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| Supplier Device Package | 8-HVSON (5.4x5.15) |
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