Technical Specifications of TRS12E65C,S1Q
Datasheet | TRS12E65C,S1Q datasheet |
Category | Discrete Semiconductor Products |
Family | Diodes - Rectifiers - Single |
Manufacturer | Toshiba Semiconductor and Storage |
Series | - |
Packaging | Tube |
Diode Type | Silicon Carbide Schottky |
Voltage - DC Reverse (Vr) (Max) | 650V |
Current - Average Rectified (Io) | 12A (DC) |
Voltage - Forward (Vf) (Max) @ If | 1.7V @ 12A |
Speed | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr) | - |
Current - Reverse Leakage @ Vr | 90μA @ 170V |
Capacitance @ Vr, F | 65pF @ 650V, 1MHz |
Mounting Type | Through Hole |
Package / Case | TO-220-2 |
Supplier Device Package | TO-220-2L |
Operating Temperature - Junction | 175°C (Max) |
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