Technical Specifications of BSM75GB170DN2HOSA1
| Category | Discrete Semiconductor Products |
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| Family | Transistors - IGBTs - Modules |
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| Manufacturer | Infineon Technologies |
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| Series | - |
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| IGBT Type | - |
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| Configuration | Half Bridge |
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| Voltage - Collector Emitter Breakdown (Max) | 1700V |
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| Current - Collector (Ic) (Max) | 110A |
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| Power - Max | 625W |
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| Vce(on) (Max) @ Vge, Ic | 3.9V @ 15V, 75A |
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| Current - Collector Cutoff (Max) | - |
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| Input Capacitance (Cies) @ Vce | 11nF @ 25V |
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| Input | Standard |
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| NTC Thermistor | No |
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| Mounting Type | Chassis Mount |
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| Package / Case | Module |
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| Supplier Device Package | Module |
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