Technical Specifications of STH110N10F7-6
Datasheet | STH110N10F7-6 datasheet |
Category | Discrete Semiconductor Products |
Family | Transistors - FETs, MOSFETs - Single |
Manufacturer | STMicroelectronics |
Series | DeepGATE?, STripFET? VII |
Packaging | Tape & Reel (TR) |
FET Type | MOSFET N-Channel, Metal Oxide |
FET Feature | Standard |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 110A (Tc) |
Rds On (Max) @ Id, Vgs | 6.5 mOhm @ 55A, 10V |
Vgs(th) (Max) @ Id | 4.5V @ 250μA |
Gate Charge (Qg) @ Vgs | 72nC @ 10V |
Input Capacitance (Ciss) @ Vds | 5117pF @ 50V |
Power - Max | 150W |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | TO-263-7, D2Pak (6 Leads + Tab) |
Supplier Device Package | H2PAK |
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