Technical Specifications of SQJ840EP-T1_GE3
Datasheet | SQJ840EP-T1_GE3 datasheet |
Category | Discrete Semiconductor Products |
Family | Transistors - FETs, MOSFETs - Single |
Manufacturer | Vishay Siliconix |
Series | TrenchFET? |
Packaging | Tape & Reel (TR) |
FET Type | MOSFET N-Channel, Metal Oxide |
FET Feature | Standard |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
Rds On (Max) @ Id, Vgs | 9.3 mOhm @ 10.3A, 10V |
Vgs(th) (Max) @ Id | 2.2V @ 250μA |
Gate Charge (Qg) @ Vgs | 38nC @ 10V |
Input Capacitance (Ciss) @ Vds | 1900pF @ 15V |
Power - Max | 46W |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | PowerPAK? SO-8 |
Supplier Device Package | PowerPAK? SO-8 |
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