Technical Specifications of SSM6N15AFE,LM
| Datasheet |  SSM6N15AFE,LM datasheet |
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| Category | Discrete Semiconductor Products |
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| Family | Transistors - FETs, MOSFETs - Arrays |
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| Manufacturer | Toshiba Semiconductor and Storage |
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| Series | - |
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| Packaging | Tape & Reel (TR) |
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| FET Type | 2 N-Channel (Dual) |
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| FET Feature | Logic Level Gate, 2.5V Drive |
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| Drain to Source Voltage (Vdss) | 30V |
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| Current - Continuous Drain (Id) @ 25°C | 100mA |
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| Rds On (Max) @ Id, Vgs | 3.6 Ohm @ 10mA, 4V |
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| Vgs(th) (Max) @ Id | 1.5V @ 100μA |
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| Gate Charge (Qg) @ Vgs | - |
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| Input Capacitance (Ciss) @ Vds | 13.5pF @ 3V |
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| Power - Max | 150mW |
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| Operating Temperature | 150°C (TJ) |
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| Mounting Type | Surface Mount |
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| Package / Case | SOT-563, SOT-666 |
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| Supplier Device Package | ES6 |
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