Technical Specifications of BUJ105AB,118
| Datasheet |  BUJ105AB,118 datasheet |
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| Category | Discrete Semiconductor Products |
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| Family | Transistors - Bipolar (BJT) - Single |
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| Manufacturer | NXP Semiconductors |
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| Series | - |
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| Packaging | Tape & Reel (TR) |
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| Transistor Type | NPN |
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| Current - Collector (Ic) (Max) | 8A |
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| Voltage - Collector Emitter Breakdown (Max) | 400V |
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| Vce Saturation (Max) @ Ib, Ic | 1V @ 800mA, 4A |
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| Current - Collector Cutoff (Max) | 100μA |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | 13 @ 500mA, 5V |
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| Power - Max | 125W |
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| Frequency - Transition | - |
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| Mounting Type | Surface Mount |
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| Package / Case | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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| Supplier Device Package | D2PAK |
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