Technical Specifications of RGT8NS65DGTL
| Datasheet |  RGT8NS65DGTL datasheet |
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| Category | Discrete Semiconductor Products |
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| Family | Transistors - IGBTs - Single |
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| Manufacturer | Rohm Semiconductor |
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| Series | - |
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| Packaging | Tape & Reel (TR) |
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| IGBT Type | Trench Field Stop |
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| Voltage - Collector Emitter Breakdown (Max) | 650V |
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| Current - Collector (Ic) (Max) | 8A |
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| Current - Collector Pulsed (Icm) | 12A |
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| Vce(on) (Max) @ Vge, Ic | 2.1V @ 15V, 4A |
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| Power - Max | 65W |
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| Switching Energy | - |
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| Input Type | Standard |
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| Gate Charge | 13.5nC |
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| Td (on/off) @ 25°C | 17ns/69ns |
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| Test Condition | 400V, 4A, 50 Ohm, 15V |
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| Reverse Recovery Time (trr) | 40ns |
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| Package / Case | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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| Mounting Type | Surface Mount |
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| Supplier Device Package | LPDS (TO-263S) |
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