Technical Specifications of APTM10TDUM09PG
Datasheet | APTM10TDUM09PG datasheet |
Category | Discrete Semiconductor Products |
Family | Transistors - FETs, MOSFETs - Arrays |
Manufacturer | Microsemi Corporation |
Series | - |
Packaging | Bulk |
FET Type | 6 N-Channel (3-Phase Bridge) |
FET Feature | Standard |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 139A |
Rds On (Max) @ Id, Vgs | 10 mOhm @ 69.5A, 10V |
Vgs(th) (Max) @ Id | 4V @ 2.5mA |
Gate Charge (Qg) @ Vgs | 350nC @ 10V |
Input Capacitance (Ciss) @ Vds | 9875pF @ 25V |
Power - Max | 390W |
Operating Temperature | -40°C ~ 150°C (TJ) |
Mounting Type | Chassis Mount |
Package / Case | SP6 |
Supplier Device Package | SP6-P |
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