Technical Specifications of QS5W2TR
| Datasheet |  QS5W2TR datasheet |
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| Category | Discrete Semiconductor Products |
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| Family | Transistors - Bipolar (BJT) - Arrays |
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| Manufacturer | Rohm Semiconductor |
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| Series | - |
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| Packaging | Tape & Reel (TR) |
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| Transistor Type | 2 NPN (Dual) Common Emitter |
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| Current - Collector (Ic) (Max) | 3A |
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| Voltage - Collector Emitter Breakdown (Max) | 50V |
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| Vce Saturation (Max) @ Ib, Ic | 350mV @ 50mA, 1A |
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| Current - Collector Cutoff (Max) | 1μA (ICBO) |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | 180 @ 50mA, 3V |
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| Power - Max | 1.25W |
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| Frequency - Transition | 320MHz |
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| Mounting Type | Surface Mount |
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| Package / Case | SOT-23-5 Thin, TSOT-23-5 |
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| Supplier Device Package | TSMT5 |
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