Technical Specifications of RW1A013ZPT2R
Datasheet | RW1A013ZPT2R datasheet |
Category | Discrete Semiconductor Products |
Family | Transistors - FETs, MOSFETs - Single |
Manufacturer | Rohm Semiconductor |
Series | - |
Packaging | Tape & Reel (TR) |
FET Type | MOSFET P-Channel, Metal Oxide |
FET Feature | Logic Level Gate, 1.5V Drive |
Drain to Source Voltage (Vdss) | 12V |
Current - Continuous Drain (Id) @ 25°C | 1.5A (Ta) |
Rds On (Max) @ Id, Vgs | 260 mOhm @ 1.3A, 4.5V |
Vgs(th) (Max) @ Id | 1V @ 1mA |
Gate Charge (Qg) @ Vgs | 2.4nC @ 4.5V |
Input Capacitance (Ciss) @ Vds | 290pF @ 6V |
Power - Max | 400mW |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | SOT-563, SOT-666 |
Supplier Device Package | 6-WEMT |
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