Technical Specifications of NSS35200MR6T1G
| Datasheet |  NSS35200MR6T1G datasheet |
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| Category | Discrete Semiconductor Products |
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| Family | Transistors - Bipolar (BJT) - Single |
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| Manufacturer | ON Semiconductor |
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| Series | - |
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| Packaging | Tape & Reel (TR) |
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| Transistor Type | PNP |
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| Current - Collector (Ic) (Max) | 2A |
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| Voltage - Collector Emitter Breakdown (Max) | 35V |
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| Vce Saturation (Max) @ Ib, Ic | 310mV @ 20mA, 2A |
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| Current - Collector Cutoff (Max) | 100nA |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 1.5A, 1.5V |
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| Power - Max | 625mW |
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| Frequency - Transition | 100MHz |
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| Mounting Type | Surface Mount |
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| Package / Case | SOT-23-6 |
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| Supplier Device Package | 6-TSOP |
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