Technical Specifications of IRFB59N10DPBF
Datasheet | IRFB59N10DPBF datasheet |
Category | Discrete Semiconductor Products |
Family | Transistors - FETs, MOSFETs - Single |
Manufacturer | Infineon Technologies |
Series | HEXFET? |
Packaging | Tube |
FET Type | MOSFET N-Channel, Metal Oxide |
FET Feature | Standard |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 59A (Tc) |
Rds On (Max) @ Id, Vgs | 25 mOhm @ 35.4A, 10V |
Vgs(th) (Max) @ Id | 5.5V @ 250μA |
Gate Charge (Qg) @ Vgs | 114nC @ 10V |
Input Capacitance (Ciss) @ Vds | 2450pF @ 25V |
Power - Max | 3.8W |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Package / Case | TO-220-3 |
Supplier Device Package | TO-220AB |
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