Technical Specifications of JANS2N5666U3
| Datasheet |  JANS2N5666U3 datasheet |
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| Category | Discrete Semiconductor Products |
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| Family | Transistors - Bipolar (BJT) - Single |
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| Manufacturer | Microsemi IRE Division |
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| Series | Military, MIL-PRF-19500/455 |
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| Packaging | Bulk |
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| Transistor Type | NPN |
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| Current - Collector (Ic) (Max) | 5A |
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| Voltage - Collector Emitter Breakdown (Max) | 200V |
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| Vce Saturation (Max) @ Ib, Ic | 1V @ 1A, 5A |
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| Current - Collector Cutoff (Max) | 200nA |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 1A, 5V |
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| Power - Max | 1.5W |
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| Frequency - Transition | - |
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| Mounting Type | Surface Mount |
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| Package / Case | 3-SMD, Flat Leads |
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| Supplier Device Package | U3 |
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