Technical Specifications of MPQ3906
| Datasheet |  MPQ3906 datasheet |
|---|
| Category | Discrete Semiconductor Products |
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| Family | Transistors - Bipolar (BJT) - Arrays |
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| Manufacturer | Central Semiconductor Corp |
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| Series | - |
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| Packaging | Tube |
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| Transistor Type | 4 PNP (Quad) |
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| Current - Collector (Ic) (Max) | 200mA |
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| Voltage - Collector Emitter Breakdown (Max) | 40V |
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| Vce Saturation (Max) @ Ib, Ic | 250mV @ 1mA, 10mA |
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| Current - Collector Cutoff (Max) | 50nA (ICBO) |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | 75 @ 10mA, 1V |
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| Power - Max | 500mW |
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| Frequency - Transition | 200MHz |
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| Mounting Type | Through Hole |
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| Package / Case | 14-DIP (0.300", 7.62mm) |
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| Supplier Device Package | TO-116 |
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