Technical Specifications of 2N7000,126
| Category | Discrete Semiconductor Products |
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| Family | Transistors - FETs, MOSFETs - Single |
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| Manufacturer | NXP Semiconductors |
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| Series | TrenchMOS? |
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| Packaging | Tape & Box (TB) |
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| FET Type | MOSFET N-Channel, Metal Oxide |
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| FET Feature | Logic Level Gate |
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| Drain to Source Voltage (Vdss) | 60V |
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| Current - Continuous Drain (Id) @ 25°C | 300mA (Tc) |
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| Rds On (Max) @ Id, Vgs | 5 Ohm @ 500mA, 10V |
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| Vgs(th) (Max) @ Id | 2V @ 1mA |
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| Gate Charge (Qg) @ Vgs | - |
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| Input Capacitance (Ciss) @ Vds | 40pF @ 10V |
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| Power - Max | 830mW |
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| Operating Temperature | -55°C ~ 150°C (TJ) |
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| Mounting Type | Through Hole |
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| Package / Case | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
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| Supplier Device Package | TO-92-3 |
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