Technical Specifications of PBSS4032SN,115
| Datasheet |  PBSS4032SN,115 datasheet |
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| Category | Discrete Semiconductor Products |
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| Family | Transistors - Bipolar (BJT) - Arrays |
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| Manufacturer | NXP Semiconductors |
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| Series | - |
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| Packaging | Tape & Reel (TR) |
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| Transistor Type | 2 NPN (Dual) |
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| Current - Collector (Ic) (Max) | 5.7A |
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| Voltage - Collector Emitter Breakdown (Max) | 30V |
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| Vce Saturation (Max) @ Ib, Ic | 450mV @ 300mA, 6A |
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| Current - Collector Cutoff (Max) | 100nA |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | 250 @ 2A, 2V |
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| Power - Max | 2.3W |
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| Frequency - Transition | 140MHz |
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| Mounting Type | Surface Mount |
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| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
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| Supplier Device Package | 8-SO |
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