Technical Specifications of JANTXV2N5686
| Category | Discrete Semiconductor Products |
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| Family | Transistors - Bipolar (BJT) - Single |
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| Manufacturer | Microsemi IRE Division |
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| Series | Military, MIL-PRF-19500/464 |
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| Packaging | Bulk |
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| Transistor Type | NPN |
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| Current - Collector (Ic) (Max) | 50A |
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| Voltage - Collector Emitter Breakdown (Max) | 80V |
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| Vce Saturation (Max) @ Ib, Ic | 5V @ 10A, 50A |
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| Current - Collector Cutoff (Max) | 500μA |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | 15 @ 25A, 2V |
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| Power - Max | 300W |
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| Frequency - Transition | - |
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| Mounting Type | Through Hole |
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| Package / Case | TO-204AE |
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| Supplier Device Package | TO-3 |
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