Technical Specifications of STD830CP40
| Datasheet |  STD830CP40 datasheet |
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| Category | Discrete Semiconductor Products |
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| Family | Transistors - Bipolar (BJT) - Arrays |
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| Manufacturer | STMicroelectronics |
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| Series | - |
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| Packaging | Tube |
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| Transistor Type | NPN, PNP |
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| Current - Collector (Ic) (Max) | 3A |
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| Voltage - Collector Emitter Breakdown (Max) | 400V |
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| Vce Saturation (Max) @ Ib, Ic | 500mV @ 200mA, 1A |
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| Current - Collector Cutoff (Max) | 100μA |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | 18 @ 700mA, 5V |
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| Power - Max | 3W |
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| Frequency - Transition | - |
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| Mounting Type | Through Hole |
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| Package / Case | 8-DIP (0.300", 7.62mm) |
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| Supplier Device Package | 8-DIP |
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