Navigation
Home
About us
Products
Manufacturers
RFQ
Service
FAQ
Contact us
ICRFQ.com - Electronic Components Distributor in China Since 2003
We make your sourcing easier!
Get A Fast Quote Worldwide!
[email protected]
Home > Products > Discrete Semiconductor > Transistors - FETs, MOSFETs - Single > IPB038N12N3 G

IPB038N12N3 G

Manufacturer Part Number IPB038N12N3 G
Manufacturer Infineon Technologies
Description MOSFET N-CH 120V 120A TO263-3
Lead Free Status / RoHS Status Lead free / RoHS Compliant
IPB038N12N3 G Price

Technical Specifications of IPB038N12N3 G

Datasheet IPB038N12N3 G datasheet
CategoryDiscrete Semiconductor Products
FamilyTransistors - FETs, MOSFETs - Single
ManufacturerInfineon Technologies
SeriesOptiMOS?
PackagingTape & Reel (TR)
FET TypeMOSFET N-Channel, Metal Oxide
FET FeatureStandard
Drain to Source Voltage (Vdss)120V
Current - Continuous Drain (Id) @ 25°C120A (Tc)
Rds On (Max) @ Id, Vgs3.8 mOhm @ 100A, 10V
Vgs(th) (Max) @ Id4V @ 270μA
Gate Charge (Qg) @ Vgs211nC @ 10V
Input Capacitance (Ciss) @ Vds13800pF @ 60V
Power - Max300W
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Package / CaseTO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device PackagePG-TO263-2
<   Previous Product Next Product   >
Home > Products

Electronic Components and Parts

IPB038N12N3 G

Manufacturer Part Number IPB038N12N3 G
Manufacturer Infineon Technologies
Description MOSFET N-CH 120V 120A TO263-3
Lead Free Status / RoHS Status Lead free / RoHS Compliant
IPB038N12N3 G Price

Technical Specifications of IPB038N12N3 G

Datasheet IPB038N12N3 G datasheet
CategoryDiscrete Semiconductor Products
FamilyTransistors - FETs, MOSFETs - Single
ManufacturerInfineon Technologies
SeriesOptiMOS?
PackagingTape & Reel (TR)
FET TypeMOSFET N-Channel, Metal Oxide
FET FeatureStandard
Drain to Source Voltage (Vdss)120V
Current - Continuous Drain (Id) @ 25°C120A (Tc)
Rds On (Max) @ Id, Vgs3.8 mOhm @ 100A, 10V
Vgs(th) (Max) @ Id4V @ 270μA
Gate Charge (Qg) @ Vgs211nC @ 10V
Input Capacitance (Ciss) @ Vds13800pF @ 60V
Power - Max300W
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Package / CaseTO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device PackagePG-TO263-2
We can supply Infineon Technologies part# IPB038N12N3 G. Use the request quote form to request IPB038N12N3 G pirce and lead time. RANTLE EAST ELECTRONIC - ICRFQ.com is an independent stocking distributor of electronic components. With 5+ Million line items of available electronic components can ship in short lead-time, over 300 thousand part numbers of electronic components in stock for immediately delivery, which may include part number IPB038N12N3 G. The price and lead time for IPB038N12N3 G depending on the quantity required, availability and warehouse location. Contact us today and our sales representative will provide you price and delivery on Part# IPB038N12N3 G. We look forward to doing business with you.

Related parts for IPB038N12N3 G

NX3225SA-40.000MHZ-STD-CSR-1
NX3225SA-40.000MHZ-STD-CSR-1
NDK
40MHz ±15ppm Crystal 8pF 50 Ohm -10°C ~ 75°C Surface Mount 4-SMD, No Lead (DFN, LCC)

KC5032K11.2896C1GE00
KC5032K11.2896C1GE00
AVX Corp/Kyocera Corp
11.2896MHz CMOS XO (Standard) Oscillator Surface Mount 1.8V, 2.5V, 3.3V 6mA Standby (Power Down)

MA-406 18.4320M-G0: ROHS
MA-406 18.4320M-G0: ROHS
EPSON
18.432MHz ±50ppm Crystal 20pF 40 Ohm -20°C ~ 70°C Surface Mount 4-SMD, J-Lead

416F320X2CTR
416F320X2CTR
CTS-Frequency Controls
32MHz ±15ppm Crystal 6pF 200 Ohm -20°C ~ 70°C Surface Mount 4-SMD, No Lead (DFN, LCC)

SIT8008AI-22-30E-20.000000E
SIT8008AI-22-30E-20.000000E
SiTIME
OSC XO 3.0V 20MHZ OE

9B-40.000MBBK-B
9B-40.000MBBK-B
TXC CORPORATION
40MHz ±50ppm Crystal 20pF 80 Ohm -20°C ~ 70°C Through Hole HC49/US

SIT8918BA-72-XXS-33.333333D
SIT8918BA-72-XXS-33.333333D
SiTIME
OSC XO 33.333333MHZ ST

501NCJ-ABAF
501NCJ-ABAF
Silicon Labs
32kHz ~ 100MHz LVCMOS CMEMS? Programmable Oscillator Surface Mount 1.7 V ~ 3.6 V 8.9mA Enable/Disable

DSC1001AI2-100.0000T
DSC1001AI2-100.0000T
Microchip Technology
100MHz CMOS MEMS (Silicon) Oscillator Surface Mount 1.8 V ~ 3.3 V 8.7mA Standby (Power Down)

VS-40L15CT-N3
VS-40L15CT-N3
Vishay Semiconductor Diodes Division
DIODE ARRAY SCHOTTKY 15V TO220AB

BC549BTFR
BC549BTFR
Fairchild Semiconductor
TRANS NPN 30V 0.1A TO-92

CD214B-R3400
CD214B-R3400
Bourns Inc.
DIODE GEN PURP 400V 3A SMB

BUK752R3-40E,127
BUK752R3-40E,127
NXP Semiconductors
MOSFET N-CH 40V 120A TO220AB

IRF7471PBF
IRF7471PBF
Infineon Technologies
MOSFET N-CH 40V 10A 8-SOIC

FJP5200OTU
FJP5200OTU
Fairchild Semiconductor
TRANS NPN 250V 17A TO-220AB

UGB8DT-E3/45
UGB8DT-E3/45
Vishay Semiconductor Diodes Division
DIODE GEN PURP 200V 8A TO263AB

IRFD024PBF
IRFD024PBF
Vishay Siliconix
MOSFET N-CH 60V 2.5A 4-DIP

M252512F
M252512F
Crydom Co.
MODULE POWER 25A 600V SCR DIODE

STB16NM50N
STB16NM50N
STMicroelectronics
MOSFET N-CH 500V 15A D2PAK

RB521G-30T2R
RB521G-30T2R
Rohm Semiconductor
DIODE SCHOTTKY 30V 100MA VMD2

<   Previous Product Next Product   >

Related keywords for IPB038N12N3 G