Technical Specifications of MPSW51G
| Datasheet |  MPSW51G datasheet |
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| Category | Discrete Semiconductor Products |
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| Family | Transistors - Bipolar (BJT) - Single |
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| Manufacturer | ON Semiconductor |
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| Series | - |
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| Packaging | Bulk |
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| Transistor Type | PNP |
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| Current - Collector (Ic) (Max) | 1A |
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| Voltage - Collector Emitter Breakdown (Max) | 30V |
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| Vce Saturation (Max) @ Ib, Ic | 700mV @ 100mA, 1A |
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| Current - Collector Cutoff (Max) | 100nA (ICBO) |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 100mA, 1V |
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| Power - Max | 1W |
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| Frequency - Transition | 50MHz |
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| Mounting Type | Through Hole |
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| Package / Case | TO-226-3, TO-92-3 Long Body |
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| Supplier Device Package | TO-92 |
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