Technical Specifications of JANTX2N5660
| Category | Discrete Semiconductor Products |
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| Family | Transistors - Bipolar (BJT) - Single |
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| Manufacturer | Microsemi IRE Division |
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| Series | Military, MIL-PRF-19500/454 |
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| Packaging | Bulk |
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| Transistor Type | NPN |
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| Current - Collector (Ic) (Max) | 2A |
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| Voltage - Collector Emitter Breakdown (Max) | 200V |
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| Vce Saturation (Max) @ Ib, Ic | 800mV @ 400mA, 2A |
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| Current - Collector Cutoff (Max) | 200nA |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 500mA, 5V |
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| Power - Max | 2W |
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| Frequency - Transition | - |
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| Mounting Type | Surface Mount |
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| Package / Case | TO-213AA, TO-66-2 |
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| Supplier Device Package | TO-66 |
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