Start With
Include WithHome > Products > Discrete Semiconductor > Transistors - Bipolar (BJT) - Single, Pre-Biased > PDTB113ES,126
PDTB113ES,126
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
| Manufacturer Part Number | PDTB113ES,126 |
|---|---|
| Manufacturer | NXP Semiconductors |
| Description | TRANS PREBIAS PNP 500MW TO92-3 |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| PDTB113ES,126 Price |  |
Technical Specifications of PDTB113ES,126
| Category | Discrete Semiconductor Products |
|---|---|
| Family | Transistors - Bipolar (BJT) - Single, Pre-Biased |
| Manufacturer | NXP Semiconductors |
| Series | - |
| Packaging | Tape & Box (TB) |
| Transistor Type | PNP - Pre-Biased |
| Current - Collector (Ic) (Max) | 500mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Resistor - Base (R1) (Ohms) | 1k |
| Resistor - Emitter Base (R2) (Ohms) | 1k |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 33 @ 50mA, 5V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 2.5mA, 50mA |
| Current - Collector Cutoff (Max) | 500nA |
| Frequency - Transition | - |
| Power - Max | 500mW |
| Mounting Type | Through Hole |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
| Supplier Device Package | TO-92-3 |
