Technical Specifications of HN4C51J(TE85L,F)
| Datasheet |  HN4C51J(TE85L,F) datasheet |
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| Category | Discrete Semiconductor Products |
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| Family | Transistors - Bipolar (BJT) - Arrays |
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| Manufacturer | Toshiba Semiconductor and Storage |
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| Series | - |
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| Packaging | Tape & Reel (TR) |
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| Transistor Type | 2 NPN (Dual) Common Base |
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| Current - Collector (Ic) (Max) | 100mA |
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| Voltage - Collector Emitter Breakdown (Max) | 120V |
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| Vce Saturation (Max) @ Ib, Ic | 300mV @ 1mA, 10mA |
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| Current - Collector Cutoff (Max) | 100nA (ICBO) |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 2mA, 6V |
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| Power - Max | 300mW |
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| Frequency - Transition | 100MHz |
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| Mounting Type | Surface Mount |
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| Package / Case | SC-74A, SOT-753 |
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| Supplier Device Package | SMV |
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