Technical Specifications of JAN2N6051
| Datasheet |  JAN2N6051 datasheet |
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| Category | Discrete Semiconductor Products |
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| Family | Transistors - Bipolar (BJT) - Single |
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| Manufacturer | Microsemi IRE Division |
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| Series | Military, MIL-PRF-19500/501 |
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| Packaging | Bulk |
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| Transistor Type | PNP - Darlington |
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| Current - Collector (Ic) (Max) | 12A |
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| Voltage - Collector Emitter Breakdown (Max) | 80V |
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| Vce Saturation (Max) @ Ib, Ic | 3V @ 120mA, 12A |
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| Current - Collector Cutoff (Max) | 1mA |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | 1000 @ 6A, 3V |
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| Power - Max | 150W |
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| Frequency - Transition | - |
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| Mounting Type | Through Hole |
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| Package / Case | TO-3 |
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| Supplier Device Package | TO-3 (TO-204AA) |
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