Technical Specifications of JAN2N6306
| Datasheet |  JAN2N6306 datasheet |
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| Category | Discrete Semiconductor Products |
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| Family | Transistors - Bipolar (BJT) - Single |
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| Manufacturer | Microsemi IRE Division |
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| Series | Military, MIL-PRF-19500/498 |
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| Packaging | Bulk |
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| Transistor Type | NPN |
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| Current - Collector (Ic) (Max) | 8A |
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| Voltage - Collector Emitter Breakdown (Max) | 250V |
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| Vce Saturation (Max) @ Ib, Ic | 5V @ 2A, 8A |
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| Current - Collector Cutoff (Max) | 50μA |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | 15 @ 3A, 5V |
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| Power - Max | 125W |
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| Frequency - Transition | - |
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| Mounting Type | Through Hole |
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| Package / Case | TO-204AA, TO-3 |
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| Supplier Device Package | TO-204AA (TO-3) |
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