Technical Specifications of BSC082N10LSGATMA1
| Datasheet |  BSC082N10LSGATMA1 datasheet |
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| Category | Discrete Semiconductor Products |
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| Family | Transistors - FETs, MOSFETs - Single |
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| Manufacturer | Infineon Technologies |
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| Series | OptiMOS? |
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| Packaging | Tape & Reel (TR) |
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| FET Type | MOSFET N-Channel, Metal Oxide |
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| FET Feature | Logic Level Gate |
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| Drain to Source Voltage (Vdss) | 100V |
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| Current - Continuous Drain (Id) @ 25°C | 13.8A (Ta), 100A (Tc) |
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| Rds On (Max) @ Id, Vgs | 8.2 mOhm @ 100A, 10V |
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| Vgs(th) (Max) @ Id | 2.4V @ 110μA |
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| Gate Charge (Qg) @ Vgs | 104nC @ 10V |
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| Input Capacitance (Ciss) @ Vds | 7400pF @ 50V |
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| Power - Max | 156W |
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| Operating Temperature | -55°C ~ 150°C (TJ) |
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| Mounting Type | Surface Mount |
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| Package / Case | 8-PowerTDFN |
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| Supplier Device Package | PG-TDSON-8 |
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