Technical Specifications of NTD4860N-1G
| Datasheet |  NTD4860N-1G datasheet |
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| Category | Discrete Semiconductor Products |
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| Family | Transistors - FETs, MOSFETs - Single |
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| Manufacturer | ON Semiconductor |
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| Series | - |
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| Packaging | Tube |
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| FET Type | MOSFET N-Channel, Metal Oxide |
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| FET Feature | Standard |
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| Drain to Source Voltage (Vdss) | 25V |
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| Current - Continuous Drain (Id) @ 25°C | 10.4A (Ta), 65A (Tc) |
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| Rds On (Max) @ Id, Vgs | 7.5 mOhm @ 30A, 10V |
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| Vgs(th) (Max) @ Id | 2.5V @ 250μA |
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| Gate Charge (Qg) @ Vgs | 16.5nC @ 4.5V |
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| Input Capacitance (Ciss) @ Vds | 1308pF @ 12V |
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| Power - Max | 1.28W |
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| Operating Temperature | -55°C ~ 175°C (TJ) |
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| Mounting Type | Through Hole |
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| Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |
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| Supplier Device Package | I-Pak |
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