Technical Specifications of MBT6429DW1T1G
| Datasheet |  MBT6429DW1T1G datasheet |
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| Category | Discrete Semiconductor Products |
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| Family | Transistors - Bipolar (BJT) - Arrays |
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| Manufacturer | ON Semiconductor |
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| Series | - |
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| Packaging | Tape & Reel (TR) |
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| Transistor Type | 2 NPN (Dual) |
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| Current - Collector (Ic) (Max) | 200mA |
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| Voltage - Collector Emitter Breakdown (Max) | 45V |
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| Vce Saturation (Max) @ Ib, Ic | 600mV @ 5mA, 100mA |
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| Current - Collector Cutoff (Max) | 100nA |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | 500 @ 100μA, 5V |
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| Power - Max | 150mW |
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| Frequency - Transition | 700MHz |
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| Mounting Type | Surface Mount |
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| Package / Case | 6-TSSOP, SC-88, SOT-363 |
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| Supplier Device Package | SC-88/SC70-6/SOT-363 |
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