Technical Specifications of 2N3501
| Datasheet |  2N3501 datasheet |
|---|
| Category | Discrete Semiconductor Products |
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| Family | Transistors - Bipolar (BJT) - Single |
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| Manufacturer | Central Semiconductor Corp |
|---|
| Series | - |
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| Packaging | Bulk |
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| Transistor Type | NPN |
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| Current - Collector (Ic) (Max) | 300mA |
|---|
| Voltage - Collector Emitter Breakdown (Max) | 150V |
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| Vce Saturation (Max) @ Ib, Ic | 400mV @ 15mA, 150mA |
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| Current - Collector Cutoff (Max) | 50nA (ICBO) |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 150mA, 10V |
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| Power - Max | 1W |
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| Frequency - Transition | 150MHz |
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| Mounting Type | Through Hole |
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| Package / Case | TO-205AD, TO-39-3 Metal Can |
|---|
| Supplier Device Package | TO-39 |
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