Technical Specifications of 2N2219
| Datasheet |  2N2219 datasheet |
|---|
| Category | Discrete Semiconductor Products |
|---|
| Family | Transistors - Bipolar (BJT) - Single |
|---|
| Manufacturer | Microsemi Corporation |
|---|
| Series | - |
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| Packaging | Bulk |
|---|
| Transistor Type | NPN |
|---|
| Current - Collector (Ic) (Max) | 800mA |
|---|
| Voltage - Collector Emitter Breakdown (Max) | 30V |
|---|
| Vce Saturation (Max) @ Ib, Ic | 1.6V @ 50mA, 500mA |
|---|
| Current - Collector Cutoff (Max) | 10nA |
|---|
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 150mA, 10V |
|---|
| Power - Max | 800mW |
|---|
| Frequency - Transition | - |
|---|
| Mounting Type | Through Hole |
|---|
| Package / Case | TO-205AD, TO-39-3 Metal Can |
|---|
| Supplier Device Package | TO-39 |
|---|
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