Technical Specifications of IPB47N10SL-26
Datasheet | IPB47N10SL-26 datasheet |
Category | Discrete Semiconductor Products |
Family | Transistors - FETs, MOSFETs - Single |
Manufacturer | Infineon Technologies |
Series | SIPMOS? |
Packaging | Cut Tape (CT) |
FET Type | MOSFET N-Channel, Metal Oxide |
FET Feature | Logic Level Gate |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 47A (Tc) |
Rds On (Max) @ Id, Vgs | 26 mOhm @ 33A, 10V |
Vgs(th) (Max) @ Id | 2V @ 2mA |
Gate Charge (Qg) @ Vgs | 135nC @ 10V |
Input Capacitance (Ciss) @ Vds | 2500pF @ 25V |
Power - Max | 175W |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package | PG-TO263-3-2 |
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